| 摘要 |
<p>According to the present invention, an oxide thin film transistor and a method for manufacturing the same use an amorphous ZnO based semiconductor as an active layer. A source/drain electrode is formed with a multilayer structure which has at least two layers, thereby minimizing damages on an oxide semiconductor due to a dry etching process. Meanwhile, the stability and reliability of a device can be improved by applying a double-layered protection structure which comprises a lower layer for reducing defects on the source/drain electrode of the multilayer structure and an upper layer for minimizing an external impact.</p> |
