发明名称 SILVER ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD FOR MANUFACTURING SAME
摘要 <p>A silver alloy sputtering target having a component composition containing a total of 0.1 to 1.5% by mass of In and/or Sn, which are elements that form a solid solution in Ag, with the remainder being made up by Ag and unavoidable impurities, the average grain diameter of the crystal grains being 1μm to less than 30μm, and fluctuations in the grain diameter of the crystal grains being no greater than 30% of the average grain diameter. The silver alloy sputtering target is manufactured by subjecting a melt-cast ingot to a hot rolling step, a cooling step, cold rolling, heat processing, and a machining processing step, in the stated order.</p>
申请公布号 KR20140134727(A) 申请公布日期 2014.11.24
申请号 KR20147031481 申请日期 2014.03.07
申请人 MITSUBISHI MATERIALS CORP. 发明人 KOMIYAMA SHOZO;FUNAKI SHINICHI;KOIKE SHINYA;OKUDA SEI
分类号 C23C14/34;C22F1/14;C23C14/06;H01L21/205 主分类号 C23C14/34
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