发明名称 |
GAS SUPPLY METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLY SYSTEM AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber. |
申请公布号 |
KR20140134265(A) |
申请公布日期 |
2014.11.21 |
申请号 |
KR20147019506 |
申请日期 |
2013.03.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HATOH HIDEYUKI;OGAWA HIROYUKI |
分类号 |
H01L21/3065;H01L21/31;H01L21/3205;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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