发明名称 GAS SUPPLY METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLY SYSTEM AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.
申请公布号 KR20140134265(A) 申请公布日期 2014.11.21
申请号 KR20147019506 申请日期 2013.03.08
申请人 TOKYO ELECTRON LIMITED 发明人 HATOH HIDEYUKI;OGAWA HIROYUKI
分类号 H01L21/3065;H01L21/31;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/3065
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