METHOD FOR FORMING TRANSITION METAL CHALCOGENIDES THIN FILM

摘要

A method for forming a transition metal chalcogenides thin film according to an embodiment of the present invention includes a step of supplying a transition-metal-containing precursor to a substrate in a chamber; a step of purging the transition-metal-containing precursor from the chamber; a step of supplying a reaction gas including chalcogen element to the substrate; and a step of purging a reaction gas from the chamber. In the step of supplying a reaction gas, plasma is applied to the chamber.