发明名称 GETTERING AGENTS IN MEMORY CHARGE STORAGE STRUCTURES
摘要 Apparatus having a processor and a memory device in communication with the processor, the memory device including an array of memory cells and a control logic to control access of the array of memory cells, wherein the array of memory cells includes a memory cell having a first dielectric adjacent a semiconductor, a control gate, a second dielectric between the control gate and the first dielectric, and a charge storage structure between the first dielectric and the second dielectric, and wherein the charge storage structure includes a charge-storage material and a gettering agent.
申请公布号 KR101464096(B1) 申请公布日期 2014.11.21
申请号 KR20137012393 申请日期 2011.10.18
申请人 发明人
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
代理机构 代理人
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