| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has uniform gate threshold voltage and which can be manufactured with high yield and has high reliability.SOLUTION: A semiconductor device comprises: a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a gate recess formed on the second semiconductor layer; an insulation layer formed on lateral faces of the gate recess; a gate electrode formed in the gate recess; and a source electrode and a drain electrode which are formed on the second semiconductor layer, in which the second semiconductor layer has a bandgap gradually decreasing from an interface with the first semiconductor layer toward a surface of the second semiconductor layer. |
