| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent disturb phenomenon between the blocks each consisting of a plurality of memory cells.SOLUTION: A plurality of blocks BLK, each including a plurality of sub-word lines arranged side by side in the X direction, while extending in the Y direction so as to hold a row of memory cells MC arranged side by side in the Y direction, are arranged side by side in the X direction. The arrangement pitch of memory cells MC adjacent to each other in the X direction in the block BLK is a first pitch, and the arrangement pitch of memory cells MC adjacent to each other in the X direction between the blocks BLK adjacent to each other is a second pitch larger than the first pitch. According to the invention, disturb phenomenon between the blocks can be prevented.</p> |
