| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element having a high MR ratio and capable of supplying a large current density, a magnetic head and a magnetic record regeneration apparatus.SOLUTION: The magnetoresistance effect element includes: a magnetoresistance effect film that has a first magnetic film, a second magnetic film, and a nonmagnetic intermediate film formed between the first magnetic film and the second magnetic film. Defining A as an alloy which contains at least Fe and Mn, and defining B as an alloy which contains at least Si, Al and Ge, at least one of the first and the second magnetic films is a Heusler alloy which is expressed by Co(AB(40at%≤x≤60at%, 0.3≤y≤0.7). The at least one of the magnetic films has its composition modulated in a film thickness direction so that a ratio of Fe/(Fe+Mn) in a first region formed close to an interface with the intermediate film and in the film thickness direction is 60% or less, and the ratio of Fe/(Fe+Mn) in a second region formed in the film thickness direction farther away from the interface than the first region is 60% or more.</p> |
