Organic photosensitive optoelectronic devices with near-infrared sensitivity

摘要

An organic photosensitive optoelectronic device having near infrared sensitivity and the method of fabrication thereof are described. The organic photosensitive optoelectronic device comprises a first electrode and a second electrode and organic photoactive materials comprising C1AlPc. ~-100m (a) Ur 1_M_-----10m 0lop -s-Damwcm2 V - 14 1p -,-p 41 c 100n ~ -119 in -1.0 -0.5 0.0 0.5 1.0 Voltage (V) 2.2 (b) I 10.65 '-1.8 - 1 i 0.50 0 VocI- 0.45 1.6 --- FF 0.40 10 100 1000 P0 (mW/cm 2 )