发明名称 |
FOCUSED ION BEAM SYSTEMS AND METHODS |
摘要 |
A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece. |
申请公布号 |
WO2014184689(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
WO2014IB59922 |
申请日期 |
2014.03.18 |
申请人 |
INDIAN INSTITUTE OF TECHNOLOGY KANPUR |
发明人 |
BHATTACHARJEE, SUDEEP;MATHEW, JOSE VETTIYANKAL |
分类号 |
H01J37/08;H01J37/05;H01J37/30 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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