发明名称 FOCUSED ION BEAM SYSTEMS AND METHODS
摘要 A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.
申请公布号 WO2014184689(A1) 申请公布日期 2014.11.20
申请号 WO2014IB59922 申请日期 2014.03.18
申请人 INDIAN INSTITUTE OF TECHNOLOGY KANPUR 发明人 BHATTACHARJEE, SUDEEP;MATHEW, JOSE VETTIYANKAL
分类号 H01J37/08;H01J37/05;H01J37/30 主分类号 H01J37/08
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