Provided is a vibrating device which is capable of further reducing the absolute value of the temperature coefficient of frequency (TCF). A vibrating device (1) in which a plurality of tuning fork tines (3 to 5) extending in the Y-direction are arranged in parallel in the X-direction on a base (2), the tuning fork tines (3 to 5) are provided with a configuration in which a silicon oxide layer (12) is layered upon a Si layer (11) which is a degenerate semiconductor and an excitation section (13) is provided upon the silicon oxide layer (12), and the thickness ratio T2/(T1+T2) is in the range of (-0.0002x2-0.0136x+0.0014)±0.05 when the total thickness of the Si layer (11) is T1, the total thickness of the silicon oxide layer (12) is T2, and the temperature coefficient of frequency (TCF) when a silicon oxide layer (12) is not provided on the Si layer (11) is x.
