发明名称 LOW-K DIELECTRIC LAYER AND POROGEN
摘要 <p>A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.</p>
申请公布号 KR101464029(B1) 申请公布日期 2014.11.20
申请号 KR20110097083 申请日期 2011.09.26
申请人 发明人
分类号 H01L21/312;H01L21/3205 主分类号 H01L21/312
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