| 摘要 |
A semiconductor-embedded substrate device according to the present invention can relax a thermal stress during fabrication or use and therefore has sufficient heat radiation properties and reliability. A semiconductor-embedded substrate (100) is a multilayer substrate obtained by stacking resin layers and has, inside of the resin layer (2), a semiconductor device (30) having a bump (32) connected to a terminal electrode (11) via an internal wiring (13) and connection plug (12). A heat radiation member (20) having an opening P in which one or more openings H have been formed is arranged immediately above and opposite to the back surface (30b) of the semiconductor device (30) and heat generated therein is transferred to and released from the heat radiation member (20). |
