| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which inhibits a leakage current and has improved breakdown resistance.SOLUTION: A nitride semiconductor element 1 comprises: a substrate 10; a first buffer layer 12 arranged on the substrate; a second buffer layer 14 arranged on the first buffer layer; a third buffer layer 28 which is arranged on the second buffer layer and composed of an AlGaN nitride semiconductor; a fourth buffer layer 16 which is arranged on the third buffer layer and composed of a GaN nitride semiconductor; a barrier layer 18 which is arranged on the fourth buffer layer and composed of an AlGaN nitride semiconductor; and a source electrode 20, a drain electrode 22, and a gate electrode 26 arranged between the source electrode and the drain electrode, which are arranged on the barrier layer, in which the third buffer layer has lattice relaxation. |
