| 发明名称 |
Method to Define Multiple Layer Patterns With a Single Exposure by E-Beam Lithography |
| 摘要 |
The present disclosure provides a method that includes forming a first resist layer on a substrate; forming a second resist layer over the first resist layer; and performing an electron-beam (e-beam) lithography exposure process to the first resist layer and the second resist layer, thereby forming a first latent feature in the first resist layer and a second latent feature in the second resist layer. |
| 申请公布号 |
US2014342272(A1) |
申请公布日期 |
2014.11.20 |
| 申请号 |
US201314030875 |
申请日期 |
2013.09.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Yen-Cheng;Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
| 分类号 |
G03F1/78;G03F7/20 |
主分类号 |
G03F1/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a first resist layer on a substrate; forming a second resist layer over the first resist layer; and performing an electron-beam (e-beam) lithography exposure process to the first resist layer and the second resist layer, thereby forming a first latent feature in the first resist layer and a second latent feature in the second resist layer. |
| 地址 |
Hsin-Chu TW |
