发明名称 GAS BARRIER FILM AND METHOD FOR PRODUCING GAS BARRIER FILM
摘要 A gas barrier film having excellent gas barrier properties, and a method for producing such a gas barrier film are provided.;Disclosed are a gas barrier film obtained by forming a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen measured by an XPS analysis, when the surface of the gas barrier layer that is in contact with the base material is designated as a base material side, and the opposite surface is designated as a surface side, the gas barrier layer includes a first region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen; a second region constituted in the order of the amount of silicon>the amount of oxygen>the amount of nitrogen; and a third region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen, from the surface side toward the base material side.
申请公布号 US2014342149(A1) 申请公布日期 2014.11.20
申请号 US201214354252 申请日期 2012.10.12
申请人 LINTEC CORPORATION 发明人 Naganawa Satoshi;Suzuki Yuta
分类号 C23C14/48;C01B21/082 主分类号 C23C14/48
代理机构 代理人
主权项 1. A gas barrier film, comprising a gas barrier layer formed on a base material, wherein the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen in the gas barrier layer measured by an XPS analysis, when the surface of the gas barrier layer that is in contact with the base material is designated as a base material side, and the opposite surface is designated as a surface side, the gas barrier layer includes: a first region in the relationship of the amount of oxygen>the amount of silicon>the amount of nitrogen; a second region in the relationship of the amount of silicon>the amount of oxygen>the amount of nitrogen; and a third region in the relationship of the amount of oxygen>the amount of silicon>the amount of nitrogen, from the surface side toward the base material side.
地址 Tokyo JP