Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device

摘要

A semiconductor device includes a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. Trenches are disposed in the first semiconductor layer, the trenches extending in the first direction. The transistor further includes a drift control region arranged adjacent to the drift zone. The drift control region and the gate electrode are disposed in the trenches.

主权项

1. A semiconductor device, comprising:
a transistor, the transistor comprising a body region, a drift zone, a source region and a drain region in a first semiconductor layer having a first main surface, the body region and the drift zone being disposed between the source region and the drain region, the source region, the body region, the drift zone and the drain region being disposed along a first direction, the first direction being parallel to the first main surface; trenches in the first semiconductor layer and extending in the first direction, the transistor further comprising a dielectric layer, a gate electrode adjacent to the body region, and a drift control region adjacent to the drift zone, the drift control region and the gate electrode being disposed in the trenches, the dielectric layer being disposed between the drift region and the drift control region, wherein the drift control region comprises a monocrystalline semiconductor material.