| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide elements grown on nonpolar or semipolar (Ga, Al, In, and B)N substrates.SOLUTION: A method improves growth morphology of (Ga, Al, In, and B)N thin films on nonpolar or semipolar (Ga, Al, In, and B)N substrates. A (Ga, Al, In, and B)N thin film is grown directly on a nonpolar or semipolar (Ga, Al, In, and B)N substrate or a template and a portion of carrier gas used during growth is composed of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga, Al, In, and B)N thin films grown by the present invention.</p> |
