| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing method, in which, when a carbon-based polymer deposited on a silicon substrate is removed with oxygen plasma, a silicon oxide layer which may be simultaneously formed on a surface of the silicon substrate can be removed with a low damage to the substrate and a desired processing shape can be obtained.SOLUTION: In a plasma processing method etching a silicon oxide film 302 embedded in a groove of a silicon substrate having the groove, a deposition film deposited when the silicon oxide film 302 is subjected to plasma etching is removed with plasma using mixed gas comprising nitrogen trifluoride gas and oxygen gas.</p> |
