| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a microwave plasma processing apparatus which allows for microwave plasma processing with high uniformity by inserting a microwave irradiating section into a chamber from above, and to provide a microwave plasma source for use therein.SOLUTION: A microwave irradiating mechanism 41 having a microwave transmission path 44 and a plane slot antenna 81 is inserted into a chamber 1, where a wafer W is subjected to microwave plasma processing, from above. A diffusion plate 43 consisting of a dielectric is provided to face the wafer W so that the diffusion plate 43 comes into contact with the microwave radiation surface of the microwave irradiating mechanism 41 and spreads therefrom, and a gap where surface wave plasma is generated by microwaves is formed between the top wall of the chamber.</p> |
