| 发明名称 |
REUSING ACTIVE AREA MASK FOR TRENCH TRANSFER EXPOSURE |
| 摘要 |
A method of silicide formation in a semiconductor fabrication process is disclosed. An active area (RX) mask is used to form an active silicon area, and is then reused to form a trench transfer (TT) area. A trench block (TB) mask is logically ANDed with the active area (RX) mask to form a trench silicide (TS) region. |
| 申请公布号 |
US2014342556(A1) |
申请公布日期 |
2014.11.20 |
| 申请号 |
US201313897890 |
申请日期 |
2013.05.20 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Salama Mohamed;Neogi Tuhin Guha;Beasor Scott |
| 分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor structure, comprising:
forming an active silicon (RX) mask; forming a trench block (TB) mask; and forming a trench silicide (TS) region as a logical AND of the RX mask and the TB mask. |
| 地址 |
Grand Cayman KY |
