发明名称 HYBRID SUBSTRATES, SEMICONDUCTOR PACKAGES INCLUDING THE SAME AND METHODS FOR FABRICATING SEMICONDUCTOR PACKAGES
摘要 Provided are a hybrid substrate, a semiconductor package including the same, and a method for fabricating the semiconductor package. The hybrid substrate may include an insulation layer, and an organic layer. The insulation layer may include a top, a bottom opposite to the top, and a conductive pattern having different pitches. The organic layer may be connected to the bottom of the insulation layer, and may include a circuit pattern connected to the conductive pattern. The conductive pattern may include a first metal pattern, and a second conductive pattern. The first metal pattern may have a first pitch, and may be disposed in the top of the insulation layer. The second conductive pattern may have a second pitch greater than the first pitch, and may be extended from the first metal pattern to be connected to the circuit pattern through the insulation layer.
申请公布号 US2014342508(A1) 申请公布日期 2014.11.20
申请号 US201414451982 申请日期 2014.08.05
申请人 SON Daewoo;KIM Chulwoo 发明人 SON Daewoo;KIM Chulwoo
分类号 H01L21/56;H01L21/48 主分类号 H01L21/56
代理机构 代理人
主权项 1. A method for fabricating a semiconductor package, the method comprising: providing a substrate, the substrate having a first layer and a second layer on the first layer, the first layer including a conductive pattern with a first pitch and a second pitch greater than the first pitch and the second layer having a circuit pattern with the second pitch, the circuit pattern being connected to the conductive pattern; providing a semiconductor chip on the substrate, the semiconductor chip including a plurality of chip pads having the first pitch; connecting the chip pads to the conductive pattern to electrically connect the semiconductor chip to the substrate; forming a molding layer on the semiconductor chip; and forming an external terminal connected to the circuit pattern.
地址 Cheonan-si KR