发明名称 |
HYBRID SUBSTRATES, SEMICONDUCTOR PACKAGES INCLUDING THE SAME AND METHODS FOR FABRICATING SEMICONDUCTOR PACKAGES |
摘要 |
Provided are a hybrid substrate, a semiconductor package including the same, and a method for fabricating the semiconductor package. The hybrid substrate may include an insulation layer, and an organic layer. The insulation layer may include a top, a bottom opposite to the top, and a conductive pattern having different pitches. The organic layer may be connected to the bottom of the insulation layer, and may include a circuit pattern connected to the conductive pattern. The conductive pattern may include a first metal pattern, and a second conductive pattern. The first metal pattern may have a first pitch, and may be disposed in the top of the insulation layer. The second conductive pattern may have a second pitch greater than the first pitch, and may be extended from the first metal pattern to be connected to the circuit pattern through the insulation layer. |
申请公布号 |
US2014342508(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201414451982 |
申请日期 |
2014.08.05 |
申请人 |
SON Daewoo;KIM Chulwoo |
发明人 |
SON Daewoo;KIM Chulwoo |
分类号 |
H01L21/56;H01L21/48 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a semiconductor package, the method comprising:
providing a substrate, the substrate having a first layer and a second layer on the first layer, the first layer including a conductive pattern with a first pitch and a second pitch greater than the first pitch and the second layer having a circuit pattern with the second pitch, the circuit pattern being connected to the conductive pattern; providing a semiconductor chip on the substrate, the semiconductor chip including a plurality of chip pads having the first pitch; connecting the chip pads to the conductive pattern to electrically connect the semiconductor chip to the substrate; forming a molding layer on the semiconductor chip; and forming an external terminal connected to the circuit pattern. |
地址 |
Cheonan-si KR |