SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

主权项

1. A semiconductor device comprising:
a first oxide film; an oxide semiconductor film over the first oxide film; a source electrode over the oxide semiconductor film, the source electrode being in contact with the oxide semiconductor film; a drain electrode over the oxide semiconductor film, the drain electrode being in contact with the oxide semiconductor film; a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the second oxide film; and a gate electrode over the gate insulating film, the gate electrode overlapping the oxide semiconductor film, wherein a top end portion of the oxide semiconductor film is curved when seen in a channel width direction.