| 摘要 |
The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process. |
| 主权项 |
1. A composition for forming silicon-containing film to be formed in a multi-layer resist method used in lithography, the composition containing, at least, a silicon-containing compound (A) and an organic solvent (B);
wherein the silicon-containing compound (A) is obtained by hydrolytically condensing a mixture comprising: one or more kinds selected from a hydrolyzable silicon compound represented by the following general formula (A-1), a hydrolyzate of the compound, a condensate of the compound, and a hydrolysis condensate of the compound; and one or more kinds of compounds each selected from a group consisting of a hydrolyzable silicon compound represented by the following general formula (A-2-1), a hydrolyzate of the compound, a condensate of the compound, a hydrolysis condensate of the compound, a reactive compound represented by the following general formula (A-2-2), a hydrolyzate of the compound, a condensate of the compound, and a hydrolysis condensate of the compound,
(R2)m2(OR3)(3-m2)Si—R1—Si(R4)m4(OR5)(3-m4) (A-1)R11m11R12m12R13m13Si(OR14)(4-m11-m12-m13) (A-2-1)U(OR21)m21(OR22)m22(O)m23/2 (A-2-2), wherein R1 represents a single bond, or a divalent organic group having 1 to 20 carbon atoms, each R2 and R4 independently represent a hydrogen atom, or a monovalent organic group having 1 to 20 carbon atoms, each R3 and R5 independently represent a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms, and m2 and m4 represent integers satisfying that 0≦m2+m4≦2; each R11, R12, and R13 independently represent a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms, each m11, m12, and m13 independently represent 0 or 1, and satisfy that 0≦m11+m12+m13≦3, and R14 represents a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms; and each R21 and R22 independently represent a hydrogen atom, or an organic group having 1 to 30 carbon atoms, m21+m22+m23/2 represents a valence to be determined by a kind of U, each m21, m22, and m23 independently represent an integer of 0 or more, and U represents one of elements belonging to the III group, IV group, and V group in the periodic table, except for carbon and silicon. |
