AMORPHOUS METAL OXIDE THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR

摘要

An amorphous metal oxide thin-film transistor and a preparation method therefor. The preparation method sequentially comprises: a. preparing a metal conducting layer on a substrate (01) and patterning same as a gate electrode (02); b. depositing a first insulating thin film (03) on the metal conducting layer as a gate insulating layer; c. depositing an amorphous metal oxide thin film on the gate insulating layer and patterning same as an active layer (04); d. depositing metal on the active layer (04) and patterning same as a source and a drain electrode (05); e. performing stabilization processing on a back channel; and f. depositing a second insulating thin film on the source and the drain electrode (05) as a passivation layer (06). Through the stabilization processing step of the back channel, etching residuals and damage at the back channel can be reduced after etching the source and the drain electrode, the stability of the thin-film transistor can be improved, and the process is simple and the cost is low.