SEMICONDUCTOR DEVICE AND PROCESS OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To enable a single crystal layer of a metal Ge compound to be formed on a semiconductor layer having Ge as a main component and to improve interface flatness between the metal Ge compound and the semiconductor layer.SOLUTION: The semiconductor device includes a metal Ge compound layer 16 formed on a semiconductor layer 10 having Ge as a main component. Sn is contained in the vicinity of an interface between the metal Ge compound layer 16 and the semiconductor layer 10. The metal Ge compound layer 16 is epitaxially grown on a surface of the semiconductor layer 10.