发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has excellent characteristics and to provide a manufacturing apparatus.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: injecting an impurity into a silicon carbide substrate; applying an organic solution on one surface of the silicon carbide substrate; forming a carbon layer on the one surface and the other surface of the silicon carbide substrate by heating the organic solution in a non-oxidation atmosphere; and activating the impurity.</p> |
申请公布号 |
JP2014220322(A) |
申请公布日期 |
2014.11.20 |
申请号 |
JP20130097498 |
申请日期 |
2013.05.07 |
申请人 |
TOSHIBA CORP |
发明人 |
MIZUKAMI MAKOTO;YANASE NAOKO;YAMASHITA ATSUKO |
分类号 |
H01L21/265;H01L21/31;H01L21/314 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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