发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has excellent characteristics and to provide a manufacturing apparatus.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: injecting an impurity into a silicon carbide substrate; applying an organic solution on one surface of the silicon carbide substrate; forming a carbon layer on the one surface and the other surface of the silicon carbide substrate by heating the organic solution in a non-oxidation atmosphere; and activating the impurity.</p>
申请公布号 JP2014220322(A) 申请公布日期 2014.11.20
申请号 JP20130097498 申请日期 2013.05.07
申请人 TOSHIBA CORP 发明人 MIZUKAMI MAKOTO;YANASE NAOKO;YAMASHITA ATSUKO
分类号 H01L21/265;H01L21/31;H01L21/314 主分类号 H01L21/265
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