SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a resistive element composed to include an oxide semiconductor and a transistor composed to include an oxide semiconductor on the same substrate.SOLUTION: A semiconductor device has a resistive element and a transistor which are provided on the same substrate, in which the resistive element includes at least a first oxide semiconductor layer and the transistor includes at least a second oxide semiconductor layer, and the first oxide semiconductor layer and the second oxide semiconductor layer have the same composition and a carrier density of the first oxide semiconductor layer is higher than a carrier density of the second oxide semiconductor layer. The first oxide semiconductor layer has the higher carrier density in comparison with the second oxide semiconductor layer by being subjected to a treatment by which oxygen deficiency and/or an impurity concentration increases.