Defect Reduction Using Aspect Ratio Trapping

摘要

Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

主权项

1. A method comprising:
defining an opening having a dielectric sidewall to a first crystalline semiconductor material of a substrate, the substrate having a top surface; and epitaxially growing a second crystalline semiconductor material in the opening, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, a dislocation in the second crystalline semiconductor material arising from the lattice mismatch, the epitaxially growing the second crystalline semiconductor material comprising inducing a facet in the second crystalline semiconductor material, the facet being non-parallel to the top surface of the substrate, the dislocation being directed to the dielectric sidewall in a direction within 10° of perpendicular to the facet.