Relaxed Silicon Germanium Platform for High Speed CMOS Electronics and High Speed Analog Circuits

摘要

Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

主权项

1. A method comprising:
providing a relaxed SiGe layer on a substrate and, thereover, a structure comprising a strained device layer; and providing at least one region comprising at least one of silicide and silicide/germanicide disposed over said relaxed SiGe layer.