发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor. |
申请公布号 |
US2014342498(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201414448015 |
申请日期 |
2014.07.31 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
ENDO Yuta;SASAKI Toshinari;NODA Kosei |
分类号 |
H01L29/66;H01L29/51;H01L29/423;H01L21/477;H01L21/425 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |