| 发明名称 |
SEMICONDUCTOR PROCESSING METHOD |
| 摘要 |
A method for detecting metal contamination from a film-forming process causing interface traps is described. The film-forming process is performed to form a dielectric film on a wafer. An annealing treatment is performed to reduce the interface traps between the wafer and the dielectric film. Thereafter, the bulk recombination lifetime (BRLT) of the wafer is measured to estimate the amount of the metal contamination. |
| 申请公布号 |
US2014342473(A1) |
申请公布日期 |
2014.11.20 |
| 申请号 |
US201313894031 |
申请日期 |
2013.05.14 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Zhang Sheng;Yu Guang-You;Xu Ying-Jie;Che Chaw |
| 分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for detecting metal contamination from a film-forming process causing interface traps, comprising:
performing the film-forming process to form a dielectric film on a wafer; performing an annealing treatment to reduce interface traps between the wafer and the dielectric film; and measuring a bulk recombination lifetime (BRLT) of the wafer to estimate an amount of the metal contamination. |
| 地址 |
Hsinchu TW |
