SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable an InP hetero-junction bipolar transistor and a junction field effect transistor to be formed on the same substrate.SOLUTION: In a semiconductor device, a base layer 113 of a hetero-junction bipolar transistor and a gate electrode layer 121 of a junction field effect transistor are composed of the same third semiconductor layer 103, and a first emitter cap layer 115 of the hetero-junction bipolar transistor and a channel layer 122 of the junction field effect transistor are composed of the same fifth semiconductor layer 105.