METHOD OF FORMING A THROUGH-SILICON VIA UTILIZING A METAL CONTACT PAD IN A BACK-END-OF-LINE WIRING LEVEL TO FILL THE THROUGH-SILICON VIA

摘要

A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with plated-conductive material (e.g., copper) from an electroplating solution. Moreover, the method provides a way to fill high aspect ratio TSVs with minimal additional semiconductor fabrication process steps, which can increase the silicon area that is available for forming additional electronic components on integrated circuits.

主权项

1. A method of forming a via structure, the method comprising the steps of:
forming a through-silicon via in a substrate, wherein the substrate has a first-surface and a second-surface; forming a back-end-of-line (BEOL) wiring level on the first-surface of the substrate, wherein the BEOL wiring level includes a contact pad; forming a photosensitive polyimide layer on the BEOL wiring level; forming an opening in the photosensitive polyimide layer; forming a ball limiting metallization (BLM) seed layer on the photosensitive polyimide layer and over the opening in the photosensitive polyimide layer; forming an adhesive layer on the BLM seed layer; forming a mechanical support carrier layer on the adhesive layer; forming an electrical path through the mechanical support carrier layer, wherein the electrical path includes the contact pad; and performing an electroplating technique to fill the through-silicon via with a plated-conductive material.