| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a composition capable of forming a barrier metal film at an opening of an inter-electrode insulation film without disconnection.SOLUTION: According to an embodiment, a semiconductor device comprises a gate electrode which is formed on a top face of a semiconductor substrate via a gate insulation film and includes: a first conductive film which is formed on the gate insulation film and has a recess of a first opening width formed on a top face; an inter-electrode insulation film which is formed on the top face of the first conductive film and has a silicon oxide film and has an opening of a second opening width wider than the first opening width at a position of the recess of the first conductive film; a second conductive film which is formed on a top face of the inter-electrode insulation film and has an opening of a third opening width wider than the second opening width at a position of the opening; a barrier metal film which is formed on a top face of the second conductive film and a lateral face of the opening, and a top face and a lateral face of the opening of the inter-electrode insulation film, and inside the recess of the first conductive film, and which has a predetermined film thickness; and a metal film formed to cover a top face of the barrier metal film.</p> |
