THIN FILM TRANSISTOR, PREPARATION METHOD, AND CORRESPONDING LIQUID CRYSTAL DISPLAY

摘要

Provided is a thin film transistor. The thin film transistor at least comprises: a gate electrode (11) formed on a substrate (10), a gate insulation layer (12) contacting the gate electrode (11), and an oxide semiconductor layer (14) disposed on the other side of the gate insulation layer (12). A hydrogen concentration of the gate insulation layer (12) presents gradient concentration distribution, the hydrogen concentration of a part close to the gate electrode (11) is higher, and the hydrogen concentration of a part close to the oxide semiconductor layer (14) is lower. Also provided are a method for preparing the thin film transistor, and a corresponding thin film transistor liquid crystal display. By reducing the hydrogen concentration of the gate insulation layer (12), the condition that oxygen in the oxide semiconductor layer (14) is combined with hydrogen in the gate insulation layer (12) to electrically degrade the thin film transistor is avoided.