| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a p-type antimony-based compound semiconductor crystal which is lattice-matched to an InP substrate, in the InP substrate with high controllability.SOLUTION: A lamination structure of an antimony-based p-type compound semiconductor is a layered structure formed by successively laminating a first compound semiconductor layer and a p-type conductive GaAsSb layer to which Si is added as an impurity, on an InP substrate. A method of manufacturing the lamination structure of the antimony-based compound semiconductor includes the steps of: laminating the first compound semiconductor layer on the InP substrate; and growing a p-type conductive GaAsSb crystal to which Si is added as an impurity, on the first compound semiconductor layer by supplying TEGa, AsH, TMSb and SiH. |
