MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC RECORD REGENERATION APPARATUS AND MANUFACTURING METHOD OF MAGNETORESISTANCE EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element having a magnetic layer with a low crystal regularization temperature and a large resistance change rate, a magnetic head, a magnetic record regeneration apparatus and a manufacturing method of magnetoresistance effect element.SOLUTION: The magnetoresistance effect element has a magnetoresistance effect film which includes: a first magnetic film; a second magnetic film; and a nonmagnetic intermediate film formed between the first magnetic film and the second magnetic film. Defining A as an alloy containing Co and at least one element selected from Fe and Mn, and defining B as an alloy containing Si and Ge, at least one of the first and the second magnetic films is expressed by AB(65at%≤x≤85at%). A composition of the at least one of the magnetic films changes in a film thickness direction so that the density of Si decreases and the density of Ge increases as the distance from an interface with the intermediate film increases.