| 摘要 |
PROBLEM TO BE SOLVED: To provide a rinse liquid for lithography which improves pattern melting problem generated by a pattern collapse or defect, LWR, further micronization of pattern, and to provide a resist pattern formation method using the same.SOLUTION: There is provided a rinse liquid for lithography containing a nonionic surfactant represented by the formula (I) and water. In the formula (I), where Rand Rmay be the same or different and represent a hydrogen atom or a methyl group, Rand Rmay be the same or different and represent a hydrogen atom, a methyl group, or an ethyl group, Rrepresents a hydrocarbon group having 2 to 5 carbon atoms including a double bond or a triple bond or a phenylene group, and Rand Rmay be the same or different and represent a hydrogen atom or a methyl group. |
