| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress leak current flowing to a selected memory cell.SOLUTION: A resistance change memory relating to an embodiment applies a first potential VL to a first end of a selected first conductive wire La1000 to be connected a selected memory cell M-sel among a plurality of first conductive wires La1 to La4000 in an operation mode for applying voltage or current to a selected memory cell, applies a second potential VH higher than the first potential VL to a first end of a selected second conductive wire Lbj to be connected to a selected memory cell M-sel among a plurality of second conductive wires, and applies third potentials VH-α1 to VH-α999, VUX1 lower than the second potential VH to first ends of non-selected first conductive wires La1 to La999, La1001 to La4000 not to be connected to the selected memory cell M-sel among the plurality of first conductive wires La1 to La4000.</p> |
