| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser element that is small in chip size, reducible in cost by easily forming an electrode, and high in yield and reliability, and a method of manufacturing the same.SOLUTION: A method of manufacturing a semiconductor laser element 1 which has a first element part 10 and a second element part 20 emitting laser beams differing in wavelength includes: a first etching process of removing a predetermined region of a first semiconductor laminate film 11 epitaxially grown on a substrate 2 by dry etching; a dielectric film forming process of forming a dielectric film 19 on a side wall 11k of the first semiconductor laminate film 11; and a second etching process of forming a parting groove 3 by removing a predetermined region of a semiconductor laminate film 21 epitaxially grown on the substrate 2 and first semiconductor laminate film 11 up to on the substrate 2 by etching including dry etching.</p> |
