Integrated Circuit Devices Including Interconnections Insulated by Air Gaps and Methods of Fabricating the Same

摘要

Semiconductor devices and methods of fabricating the same are provided. The semiconductor device may include interconnections extending in a first direction on a substrate and spaced apart from each other in a second direction perpendicular to the first direction, barrier dielectric patterns disposed on top surfaces of the interconnections, respectively, and an upper interlayer dielectric layer disposed on the interconnection. Respective air gaps are disposed between adjacent ones of the interconnections.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming interconnections extending in a first direction on a substrate, wherein the interconnections are spaced apart from each other in a second direction different than the first direction; forming barrier dielectric patterns on top surfaces of the interconnections, respectively; and forming an upper interlayer dielectric layer on the interconnections, wherein an air gap is defined between adjacent ones of the interconnections.