SIGNAL PROCESSING DEVICE

摘要

A signal processing device is produced. The signal processing device including a first transistor with high off-state resistance, a second transistor which controls conduction between two different nodes, a capacitor which holds electric charge, and a current control element such as a transistor or a resistor. The first node to which a gate of the second transistor and a second electrode of the current control element are connected, and the second node to which one of a source and a drain of the first transistor, a first electrode of the capacitor, and a first electrode of the current control element are connected. The capacitance (including a parasitic capacitance) of the second node is greater than ten times the capacitance (including a parasitic capacitance) of the first node. The capacitance does not affect the first node; thus, a boosting effect is large and charge retention characteristics are favorable.

主权项

1. A signal processing device comprising:
a first transistor; a second transistor; a third transistor; a capacitor; a first node at which a gate of the first transistor and a one of a source and a drain of the third transistor are connected; and a second node at which one of a source and a drain of the second transistor, the other of the source and the drain of the third transistor, and a first electrode of the capacitor are connected, wherein switching of the second transistor and switching of the third transistor are synchronized.