Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices

摘要

A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1−wAs on a semi-insulating (100) InP substrate, where the InwAl1−wAs is lattice matched to InP, followed by an AlAsxSb1−x buffer layer on the InwAl1−wAs layer, an AlAsxSb1−x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1−x barrier layer on the quantum well layer, an InyAl1−ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

主权项

1. A semiconductor device comprising:
an InwAl1−wAs layer disposed on an InP substrate, the InwAl1−wAs being lattice matched to the InP; an AlAsxSb1−x buffer layer disposed on the InwAl1−wAs layer; a quantum well layer disposed on the spacer layer, the quantum well layer comprising one of a GaSb and an InGaSb layer; an AlAsxSb1−x barrier layer disposed on the quantum well layer; an InyAl1−ySb layer disposed on the AlAsxSb1−x barrier layer; and an InAs cap disposed on the AlAsxSb1−x barrier layer; wherein the quantum well layer is provides a low-resistivity p-type quantum well.