发明名称 |
Group III-V Device with a Selectively Modified Impurity Concentration |
摘要 |
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface. |
申请公布号 |
US2014339686(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201414449057 |
申请日期 |
2014.07.31 |
申请人 |
International Rectifier Corporation |
发明人 |
Briere Michael A. |
分类号 |
H01L29/10;H01L29/20;H01L21/02;H01L29/36 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
El Segundo CA US |