| 摘要 |
PROBLEM TO BE SOLVED: To inhibit generation of cross-hatch.SOLUTION: A semiconductor device manufacturing method comprises: a process of growing on an InP substrate 10 by MOCVD method, a first intermediate layer 30 and a second intermediate layer 32 which are composed of GaInAsP layers each having a composition ratio lattice matched with InP; and a process of growing a buffer layer 14 and a clad layer 20 of InP layers on the first intermediate layer 30 and the second intermediate layer 32, respectively, by MOCVD method. In growing of the first intermediate layer 30 and the second intermediate layer 32, a growth gas is supplied in a condition where a material gas of at least one of Ga and As is lower than a gas flow rate according to the composition ratio of the first intermediate layer 30 and the second intermediate layer 32. |
