WAFER ETCHING APPARATUS AND WAFER ETCHING METHOD USING THE SAME

摘要

A wafer etching apparatus and a wafer etching method using the wafer etching apparatus, which are capable of etching Si wafer in a dry etching method, are disclosed. According to the wafer etching apparatus and the wafer etching method, the capacitively coupled plasma unit or the inductively coupled plasma unit and the remote plasma unit are included together to etch wafer in a high speed and to reduce etching operation time. Additionally, the chuck has an upper surface with roughness so that the wafer can be cooled down through a helium gas provided to the wafer through a minute space between the upper surface and the wafer. Therefore, unwanted plasma which is generated in the groove in the conventional wafer etching apparatus is prevented to prevent damage of the wafer.

主权项

1. A wafer etching apparatus comprising:
a process chamber having a chuck disposed therein to support a wafer; a first plasma unit being connected to the process chamber and spraying a first etching gas of high pressure into the process chamber to etch the wafer with large surface in a high speed; and a second plasma unit being connected to the process chamber and spraying a second etching gas of low pressure into the process chamber to remove stress of the wafer, to form copper pillar, and to etch the surface of the wafer in order to form wanted roughness.