| 发明名称 |
CONTROLLING TEMPERATURE OF A FARADAY SHIELD |
| 摘要 |
A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition. |
| 申请公布号 |
US2014342568(A1) |
申请公布日期 |
2014.11.20 |
| 申请号 |
US201313896175 |
申请日期 |
2013.05.16 |
| 申请人 |
Lam Research Corporation |
发明人 |
Sant Sanket;Casaes Raphael |
| 分类号 |
G05D23/19;H01L21/3065 |
主分类号 |
G05D23/19 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for controlling thermal cycling of a faraday shield in a plasma process chamber, comprising:
performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition. |
| 地址 |
Fremont CA US |
