METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

摘要

A method of manufacturing a semiconductor structure. A patterned first hard mask is formed on a substrate. The patterned first hard mask includes first trench patterns extending along a first direction. A second hard mask is then formed on the patterned first hard mask. A patterned photoresist layer is formed on the second hard mask. The patterned photoresist layer includes second trench patterns extending along a second direction. The second trench patterns intersect first trench patterns. Using the patterned photoresist layer as an etch mask, a first etch process is performed to transfer the second trench patterns into the patterned first hard mask and the second hard mask. Subsequently, using the patterned first hard mask as an etch mask, a second etch process is performed to transfer the first trench patterns and the second trench patterns into the substrate.

主权项

1. A method of manufacturing a semiconductor structure, comprising:
forming a patterned first hard mask on a substrate, wherein said patterned first hard mask includes a plurality of first trench patterns extending along a first direction; forming a second hard mask on said substrate and said patterned first hard mask; forming a patterned photoresist layer on said second hard mask, wherein said patterned photoresist layer includes a plurality of second trench patterns extending along a second direction, and said plurality of second trench patterns partially overlap said plurality of first trench patterns; using said patterned photoresist layer as an etch mask to perform a first etch process, thereby transferring said plurality of second trench patterns into said patterned first hard mask and said second hard mask; and using said patterned first hard mask as an etch mask to perform a second etch process, thereby transferring said first trench patterns and said second trench patterns into said substrate.