| 发明名称 |
MEMORY WITH CARBON-CONTAINING SILICON CHANNEL |
| 摘要 |
A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the control gate. A carbon content of the channel region of the second memory cell is less than a carbon content of the channel region of the first memory cell. |
| 申请公布号 |
US2014339572(A1) |
申请公布日期 |
2014.11.20 |
| 申请号 |
US201414447884 |
申请日期 |
2014.07.31 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Mouli Chandra |
| 分类号 |
H01L27/115;H01L29/16;H01L29/78 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory, comprising:
a first memory cell; and a second memory cell formed over the first memory cell; wherein each of the first memory cell and the second memory cell comprises:
a channel region comprising silicon and carbon;a control gate; anda dielectric stack between the channel region and the control gate; wherein a carbon concentration of the channel region of the second memory cell is less than a carbon concentration of the channel region of the first memory cell. |
| 地址 |
Boise ID US |
